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1 CGHV27200 200 w, 2500-2700 mhz, gan hemt for lte crees CGHV27200 is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5- 2.7 ghz lte and bwa amplifer applications. the transistor is supplied in a ceramic/metal fange package. package type: 440162 and 440161 pn: CGHV27200f and CGHV27200p rev 0.1 C octo ber 2012 features ? 2.5 - 2.7 ghz operation ? 16 db gain ? -37 dbc aclr at 50 w p ave ? 29 % effciency at 50 w p ave ? high degree of dpd correction can be applied typical performance over 2.5 - 2.7 ghz (t c = 25?c) of demonstration amplifer parameter 2.5 ghz 2.6 ghz 2.7 ghz units gain @ 47 dbm 15.0 16.0 16.0 db aclr @ 47 dbm -36.5 -37.5 -37.0 dbc drain effciency @ 47 dbm 29.0 28.5 29.0 % note: measured in the CGHV27200-tb amplifer circuit, under wcdma 3gpp test model 1, 64 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf. preliminary subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units units drain-source voltage v dss 125 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 32 ma 25?c maximum drain current 1 i dmax 12 a 25?c soldering temperature 2 t s 245 ?c screw torque 80 in-oz thermal resistance, junction to case 3 r jc 1.22 ?c/w 85?c, p diss = 96 w thermal resistance, junction to case 4 r jc 1.54 ?c/w 85?c, p diss = 96 w case operating temperature 5 t c -40, +150 ?c 30 seconds note: 1 current limit for long term, reliable operation. 2 refer to the application note on soldering at http://www.cree.com/rf/document-library 3 measured for the CGHV27200p 4 measured for the CGHV27200f 5 see also, the power dissipation de-rating curve on page 6 electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 32 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 50 v, i d = 1.0 a saturated drain current 2 i ds 24 28.8 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 125 C C v dc v gs = -8 v, i d = 32 ma rf characteristics 5 (t c = 25 ? c, f 0 = 2.7 ghz unless otherwise noted) saturated output power 3,4 p sat C 300 C w v dd = 50 v, i dq = 1.0 a pulsed drain effciency 3 C 62 C % v dd = 50 v, i dq = 1.0 a, p out = p sat gain 6 g C 15.25 C db v dd = 50 v, i dq = 1.0 a, p out = 47 dbm wcdma linearity 6 aclr C -37 C dbc v dd = 50 v, i dq = 1.0 a, p out = 47 dbm drain effciency 6 C 30.5 C % v dd = 50 v, i dq = 1.0 a, p out = 47 dbm output mismatch stress 3 vswr C C 10 : 1 y no damage at all phase angles, v dd = 50 v, i dq = 1.0 a, p out = 200 w pulsed dynamic characteristics input capacitance 7 c gs C 97 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz output capacitance 7 c ds C 13.4 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.94 C pf v ds = 50 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 pulse width = 100 s, duty cycle = 10% 4 p sat is defned as i g = 3 ma peak. 5 measured in CGHV27200-tb. 6 single carrier wcdma, 3gpp test model 1, 64 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf. 7 includes package and internal matching components. CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance figure 1. - small signal gain and return losses vs frequency for the CGHV27200 measured in CGHV27200-tb amplifer circuit v dd = 50 v, i dq = 1.0 a figure 2. - typical pulsed measurements vs input power of the CGHV27200 measured in CGHV27200-tb amplifer circuit. v ds = 50 v, i dq = 1.0 a, freq = 2.6 ghz, pulse width = 100 s, duty cycle = 10 % 0 5 10 15 20 25 m ag n i t u d e ( d b ) CGHV27200f sparameters vdd = 50 v, idq = 1.0 a -20 -15 -10 -5 0 2.3 2.4 2.5 2.6 2.7 2.8 2.9 m ag n i t u d e ( d b ) frequency (ghz) s21 s11 s22 40 50 60 70 200 250 300 350 gai n ( d b ) & d r a i n ef f i ci en cy ( % ) ou t p u t po w er ( w ) CGHV27200 pulsed measurements vs input power vdd = 50 v, idq = 1 a, freq = 2.6 ghz, pulse width = 100 us, duty cycle = 10 % output power gain drain eff 0 10 20 30 0 50 100 150 5 10 15 20 25 30 35 40 45 gai n ( d b ) & d r ai n ef f i ci en cy ( % ) ou t p u t po w er ( w ) input power (dbm) output power drain effciency CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance figure 3. - typical linearity vs output power for the CGHV27200 measured in CGHV27200-tb amplifer circuit v dd = 50 v, i dq = 1.0 a, freq = 2.6 ghz, 1c wcdma 7.5 db par figure 4. - typical linearity at p ave = 47 dbm over frequency of the CGHV27200 measured in CGHV27200-tb amplifer circuit. v dd = 50 v, i dq = 1.0 a, 1c wcdma 7.5 db par output power drain effciency gain 20 0 0 0 20 2 0 d acen t c h an n el po er ( d c) gai n ( d ) d r ai n i ci en cy ( % ) CGHV27200 inearity s utut poer vdd 0 v d re 2 gh c cdm 7 d p gain drain iciency c 0 0 0 0 0 0 2 0 0 0 d acen t c h an n el po er ( d c) gai n ( d ) d r ai n i ci en cy ( % ) erage utut poer (dm) 2 20 2 0 d acen t c h an n el po er ( d c) gai n ( d ) d r ai n i ci en cy ( % ) CGHV27200 inearity at pae 7 dm oer reuency vdd 0 v d c cdm 7 d p 9 8 7 0 0 2 20 2 20 2 20 2 270 27 280 28 d acen t c h an n el po er ( d c) gai n ( d ) d r ai n i ci en cy ( % ) reuency (gh) gain drain iciency cp drain effciency gain aclr acp gain drain effciency CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance figure 5. - typical linearity under dpd vs output power v dd = 50 v, i dq = 1.0 a, freq = 2.6 ghz, 1c wcdma 7.5 db par figure 6. - spectral mask at p ave = 47 dbm with and without dpd v dd = 50 v, i dq = 1.0 a, 1c wcdma 7.5 db par -25 -15 -5 5 20 25 30 35 a d j acen t c h an n el po w er ( d b c) gai n ( d b ) & d r ai n ef f i ci en cy ( % ) CGHV27200 linearity under dpd vs output power vdd = 50 v, idq = 1 a, freq = 2.6 ghz, 1c wcdma 7.5 db par gain - uncorrected gain - corrected drain efficiency - uncorrected drain efficiency - corrected acp - uncorrected acp - corrected -65 -55 -45 -35 0 5 10 15 36 38 40 42 44 46 48 50 a d j acen t c h an n el po w er ( d b c) gai n ( d b ) & d r ai n ef f i ci en cy ( % ) average output power (dbm) -40 -30 -20 -10 0 CGHV27200 spectral mask at pave = 47 dbm with and without dpd vdd = 50 v, idq = 1 a, freq = 2.6 ghz, 1c wcdma 7.5 db par uncorrected corrected -80 -70 -60 -50 2.585 2.590 2.595 2.600 2.605 2.610 2.615 frequency (ghz) corrected CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 typical performance figure 7. - intermodulation distortion products vs output power v dd = 50 v, i dq = 1.0 a, tone spacing = 100 khz figure 8. - power dissipation derating curve note 1. area exceeds maximum case operating temperature (see page 2). -50 -40 -30 -20 i n t er mo d u l ati o n d i st o r t i o n ( d b c) CGHV27200 intermodulation distortion products vs output power vdd = 50 v, idq = 1 a, tone spacing = 100 khz -80 -70 -60 25 30 35 40 45 50 i n t er mo d u l ati o n d i sto r t i o n ( d b c) average output power (dbm) -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 40 50 60 70 80 90 100 po w er d i ssi p ati o n ( w ) 440161 package 440162 package 0 10 20 30 40 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum case temperature ( c) note 1 CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 source and load impedances frequency (mhz) z source z load 2500 7.12 - j10.19 2.23 - j0.03 2550 6.93 - j10.38 2.27 + j0.08 2600 6.61 - j10.59 2.32 + j0.18 2650 6.17 - j10.77 2.37 + j0.27 2700 5.61 - j10.87 2.41 + j0.33 note 1 : v dd = 50 v, i dq = 1.0 a. in the 440162 package. note 2 : impedances are extracted from CGHV27200-tb demonstration circuit and are not source and load pull data derived from transistor. d z source z load g s CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 CGHV27200-tb demonstration amplifer circuit schematic CGHV27200-tb demonstration amplifer circuit outline CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 CGHV27200-tb demonstration amplifer circuit bill of materials designator description qty r1 res, 1/16 w, 0603, 1%, 150 ohms 1 r2 res, 1/16 w, 0603, 1%, 5.1 ohms 1 c1 cap, 6.2 pf, +/-0.25 pf, 0603, atc600s 1 c2 cap, 27 pf, +/-5%, 0603, atc600s 1 c3,c9,c15 cap, 8.2 pf, +/-0.25 pf, 0603, atc600s 3 c4,c10 cap, 82.0 pf, +/-5%, 0603, atc600s 2 c5,c11 cap, 470 pf, 5%, 100 v, 0603, x7r 2 c6,c12,c16 cap, 33000 pf, 0805, 100 v, x7r 3 c7 cap, 10 uf, 16v, tantalum 1 c8 cap, 27 pf, +/-5%, 250 v, 0603, atc600s 1 c13,c17 cap, 1.0 uf, 100 v, 10%, x7r, 1210 2 c14 cap, 100 uf, +/-20%, 160v, electrolytic 2 c18 cap, 33 uf, 20%, g case 1 j1,j2 conn, sma, panel mount jack, flange, 4-hole, blunt post 2 j3 conn, header, rt> plz, 0.1 cen, lk, 9 pos 1 pcb, ro4350, 0.020 thk, CGHV27200 1 2-56 soc hd screw 1/4 ss 4 #2 split lockwasher ss 4 CGHV27200 1 CGHV27200-tb demonstration amplifer circuit CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 product dimensions CGHV27200f (package type 440162) product dimensions CGHV27200p (package type 440161) CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CGHV27200 rev 0.1 preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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